IPD60R450E6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Max Dual Supply Voltage :

600V

RoHS Status :

RoHS Compliant

Turn On Delay Time :

11 ns

Number of Elements :

1

Series :

CoolMOS™ E6

Published :

2015

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Mount :

Surface Mount

Turn-Off Delay Time :

70 ns

Drain to Source Breakdown Voltage :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

9.2A Tc

Continuous Drain Current (ID) :

9.2A

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 100V

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Power Dissipation-Max :

74W Tc

Gate to Source Voltage (Vgs) :

20V

Rise Time :

9ns

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

450m Ω @ 3.4A, 10V

Weight :

3.949996g

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Pulsed Drain Current-Max (IDM) :

26A

FET Type :

N-Channel

Fall Time (Typ) :

10 ns

Vgs(th) (Max) @ Id :

3.5V @ 280μA

Drain-source On Resistance-Max :

0.45Ohm