IPD60R400CEATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

112W

Max Junction Temperature (Tj) :

150°C

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

RoHS Status :

RoHS Compliant

Height :

2.55mm

Turn On Delay Time :

11 ns

Transistor Application :

SWITCHING

Weight :

3.949996g

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

10.3A Tc

Rise Time :

9ns

Case Connection :

DRAIN

Published :

2014

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Power Dissipation-Max :

83W Tc

JESD-30 Code :

R-PSSO-G2

Drain to Source Breakdown Voltage :

600V

Rds On (Max) @ Id, Vgs :

400m Ω @ 3.8A, 10V

Terminal Form :

Gull wing

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 100V

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

56 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

CoolMOS™ CE

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-40°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

30A

Number of Elements :

1

Vgs(th) (Max) @ Id :

3.5V @ 300μA

Continuous Drain Current (ID) :

14.7A

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Fall Time (Typ) :

8 ns

Drain-source On Resistance-Max :

0.4Ohm

Mount :

Surface Mount

Number of Channels :

1

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Transistor Element Material :

SILICON

Pbfree Code :

yes