IPD60R3K4CEAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss) :

650V

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

3.9A

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

3.4 Ω @ 500mA, 10V

Lead Free :

Contains Lead

Halogen Free :

Halogen Free

Vgs(th) (Max) @ Id :

3.5V @ 40μA

Avalanche Energy Rating (Eas) :

6 mJ

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

93pF @ 100V

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

18 Weeks

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Power Dissipation-Max :

29W Tc

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

2.6A Tc

Transistor Element Material :

SILICON

Published :

2013

Operating Temperature :

-40°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Max Dual Supply Voltage :

600V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

4.6nC @ 10V

Number of Elements :

1

Terminal Position :

Single

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE