IPD60R3K3C6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

6.22mm

Published :

2008

Fall Time (Typ) :

60 ns

Max Dual Supply Voltage :

600V

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

30V

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

18.1W Tc

Rds On (Max) @ Id, Vgs :

3.3 Ω @ 500mA, 10V

Current - Continuous Drain (Id) @ 25°C :

1.7A Tc

Series :

CoolMOS™ C6

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Factory Lead Time :

12 Weeks

Turn On Delay Time :

8 ns

Operating Temperature :

-55°C~150°C TJ

Height :

2.41mm

Number of Elements :

1

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

93pF @ 100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

10ns

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

6 mJ

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

4.6nC @ 10V

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

FET Type :

N-Channel

Turn-Off Delay Time :

40 ns

Vgs(th) (Max) @ Id :

3.5V @ 40μA

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Length :

6.73mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pulsed Drain Current-Max (IDM) :

4A

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

1.7A

Element Configuration :

Single

Weight :

3.949996g

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON