IPD60R3K3C6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

600V

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

4.6nC @ 10V

Qualification Status :

Not Qualified

Series :

CoolMOS™

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Power Dissipation-Max :

18.1W Tc

Pulsed Drain Current-Max (IDM) :

4A

Input Capacitance (Ciss) (Max) @ Vds :

93pF @ 100V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3.5V @ 40μA

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Matte Tin (Sn)

Avalanche Energy Rating (Eas) :

6 mJ

Current - Continuous Drain (Id) @ 25°C :

1.7A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

600V

Number of Elements :

1

RoHS Status :

RoHS Compliant

Pin Count :

4

Reach Compliance Code :

not_compliant

Terminal Position :

Single

Published :

2008

Number of Terminations :

2

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

3.3 Ω @ 500mA, 10V

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

1.7A

Case Connection :

DRAIN