IPD60R385CPBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

790pF @ 100V

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

385m Ω @ 5.2A, 10V

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

RoHS Status :

RoHS Compliant

Power Dissipation :

83W

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

650V

Current - Continuous Drain (Id) @ 25°C :

9A Tc

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Series :

OptiMOS™

Transistor Element Material :

SILICON

Terminal Position :

Single

Drain-source On Resistance-Max :

0.385Ohm

Pulsed Drain Current-Max (IDM) :

27A

Turn-Off Delay Time :

40 ns

Drain Current-Max (Abs) (ID) :

9A

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lead Free :

Lead Free

Mount :

Surface Mount

Rise Time :

5ns

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

3.5V @ 340µA

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Continuous Drain Current (ID) :

9A

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Published :

2011

Number of Elements :

1

Max Dual Supply Voltage :

600V

Pin Count :

4

Power Dissipation-Max :

83W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

227 mJ

JEDEC-95 Code :

TO-252AA

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Turn On Delay Time :

10 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V