IPD60R385CPATMA1
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- Mfr.Part #
- IPD60R385CPATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 9A TO252-3
- Stock
- 9,502
- In Stock ：
- 9,502
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- RoHS Status :
- ROHS3 Compliant
- Supplier Device Package :
- PG-TO252-3
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Published :
- 2008
- Drain to Source Voltage (Vdss) :
- 600V
- Series :
- CoolMOS™ CP
- Current Rating :
- 9A
- Rise Time :
- 5ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tape and Reel (TR)
- Max Dual Supply Voltage :
- 600V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 385mOhm @ 5.2A, 10V
- Fall Time (Typ) :
- 5 ns
- Number of Channels :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 790pF @ 100V
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 9A
- Drain to Source Breakdown Voltage :
- 600V
- Rds On Max :
- 385 mΩ
- Max Operating Temperature :
- 150°C
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 83W Tc
- Power Dissipation :
- 83W
- Voltage - Rated DC :
- 600V
- Turn On Delay Time :
- 10 ns
- Min Operating Temperature :
- -55°C
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 40 ns
- Factory Lead Time :
- 8 Weeks
- Weight :
- 3.949996g
- Drain to Source Resistance :
- 350mOhm
- Input Capacitance :
- 790pF
- Vgs(th) (Max) @ Id :
- 3.5V @ 340µA
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 3
- Datasheets
- IPD60R385CPATMA1
N-Channel Tape & Reel (TR) 385mOhm @ 5.2A, 10V ±20V 790pF @ 100V 22nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD60R385CPATMA1 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 790pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 9A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [40 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 350mOhm.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 600V, it can support the maximum dual supply voltage.To operate this transistor, you will need a 600V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPD60R385CPATMA1 Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 40 ns
single MOSFETs transistor is 350mOhm
a 600V drain to source voltage (Vdss)
IPD60R385CPATMA1 Applications
There are a lot of Infineon Technologies
IPD60R385CPATMA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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