IPD60R380P6BTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

10.6A Tc

Surface Mount :

yes

Series :

CoolMOS™ P6

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Power Dissipation-Max :

83W Tc

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.38Ohm

Drain to Source Voltage (Vdss) :

600V

Input Capacitance (Ciss) (Max) @ Vds :

877pF @ 100V

Pulsed Drain Current-Max (IDM) :

29A

Terminal Form :

Gull wing

Reach Compliance Code :

not_compliant

JESD-609 Code :

e3

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

380m Ω @ 3.8A, 10V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4.5V @ 320µA

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

210 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Published :

2008

DS Breakdown Voltage-Min :

600V

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

ECCN Code :

EAR99

Pbfree Code :

yes

Case Connection :

DRAIN