IPD60R380P6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

18 Weeks

Drain to Source Voltage (Vdss) :

600V

Drain to Source Resistance :

342mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

CoolMOS™ P6

Mounting Type :

Surface Mount

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

600V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4.5V @ 320µA

Max Operating Temperature :

150°C

Number of Channels :

1

Mount :

Surface Mount

Number of Pins :

3

Fall Time (Typ) :

7 ns

Vgs (Max) :

±20V

Input Capacitance :

877pF

Published :

2008

Max Dual Supply Voltage :

600V

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

83W Tc

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

380mOhm @ 3.8A, 10V

Rise Time :

6ns

Min Operating Temperature :

-55°C

Turn-Off Delay Time :

33 ns

Gate to Source Voltage (Vgs) :

20V

Supplier Device Package :

PG-TO252-3

Continuous Drain Current (ID) :

10.6A

Current - Continuous Drain (Id) @ 25°C :

10.6A Tc

RoHS Status :

ROHS3 Compliant

Weight :

3.949996g

Turn On Delay Time :

12 ns

Rds On Max :

380 mΩ

Input Capacitance (Ciss) (Max) @ Vds :

877pF @ 100V