IPD60R380C6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

380m Ω @ 3.8A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Surface Mount :

yes

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

210 mJ

JESD-30 Code :

R-PSSO-G2

DS Breakdown Voltage-Min :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Cut Tape (CT)

Terminal Position :

Single

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

3.5V @ 320µA

JESD-609 Code :

e3

Factory Lead Time :

26 Weeks

Published :

2008

Terminal Form :

Gull wing

Series :

CoolMOS™

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

High Voltage

Power Dissipation-Max :

83W Tc

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

600V

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

4

Number of Terminations :

2

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.38Ohm

Current - Continuous Drain (Id) @ 25°C :

10.6A Tc

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

10.6A

Pulsed Drain Current-Max (IDM) :

30A

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 100V

Case Connection :

DRAIN