IPD60R360P7SAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Number of Terminations :

2

Terminal Position :

Single

Drain-source On Resistance-Max :

0.36ohm

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

360m Ω @ 2.7A, 10V

FET Type :

N-Channel

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Input Capacitance (Ciss) (Max) @ Vds :

555pF @ 400V

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

18 Weeks

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Operating Temperature :

-40°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 140μA

Pulsed Drain Current-Max (IDM) :

26A

Drain to Source Voltage (Vdss) :

600V

DS Breakdown Voltage-Min :

600V

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Published :

2014

Transistor Element Material :

SILICON

Series :

CoolMOS™ P7

Power Dissipation-Max :

41W Tc

Avalanche Energy Rating (Eas) :

27 mJ

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)