IPD60R2K1CEBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

6.7nC @ 10V

ECCN Code :

EAR99

Continuous Drain Current (ID) :

2.3A

Vgs(th) (Max) @ Id :

3.5V @ 60μA

Number of Elements :

1

Lead Free :

Lead Free

Weight :

3.949996g

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

30 ns

Mounting Type :

Surface Mount

Power Dissipation-Max :

22W Tc

Number of Channels :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-40°C~150°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

2.3A Tc

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

600V

Rds On (Max) @ Id, Vgs :

2.1 Ω @ 760mA, 10V

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Pins :

3

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2015

Mount :

Surface Mount

Number of Terminations :

2

Fall Time (Typ) :

50 ns

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

6A

Transistor Element Material :

SILICON

Rise Time :

7ns

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 100V

Turn On Delay Time :

7 ns

Element Configuration :

Single

Series :

CoolMOS™ CE

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Case Connection :

DRAIN