IPD60R2K1CEAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

2.1 Ω @ 760mA, 10V

Mounting Type :

Surface Mount

Mount :

Surface Mount

Halogen Free :

Halogen Free

Reach Compliance Code :

not_compliant

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Terminal Position :

Single

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

CoolMOS™ CE

Published :

2008

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

6A

Max Dual Supply Voltage :

600V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-40°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

2.3A Tc

Vgs(th) (Max) @ Id :

3.5V @ 60μA

FET Type :

N-Channel

Lead Free :

Contains Lead

Avalanche Energy Rating (Eas) :

11 mJ

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 100V

Number of Elements :

1

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Factory Lead Time :

18 Weeks

Gate Charge (Qg) (Max) @ Vgs :

6.7nC @ 10V

Power Dissipation-Max :

38W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Continuous Drain Current (ID) :

2.3A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED