IPD60R2K0C6BTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2008

Terminal Form :

Gull wing

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

600V

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

Pbfree Code :

No

Vgs(th) (Max) @ Id :

3.5V @ 60μA

Transistor Application :

SWITCHING

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 100V

Number of Terminations :

2

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

11 mJ

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Pin Count :

4

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

600V

Drain-source On Resistance-Max :

2Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Vgs (Max) :

±20V

Number of Elements :

1

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Reach Compliance Code :

not_compliant

Series :

CoolMOS™

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

6A

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

2 Ω @ 760mA, 10V

Power Dissipation-Max :

22.3W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

6.7nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

2.4A Tc

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE