IPD60R2K0C6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Published :

2008

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

2 Ω @ 760mA, 10V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Power Dissipation-Max :

22.3W Tc

Current - Continuous Drain (Id) @ 25°C :

2.4A Tc

Factory Lead Time :

12 Weeks

Number of Pins :

3

Number of Elements :

1

Drain-source On Resistance-Max :

2Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

2.4A

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

3.5V @ 60μA

Max Dual Supply Voltage :

600V

Fall Time (Typ) :

50 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

6.7nC @ 10V

Terminal Form :

Gull wing

Mount :

Surface Mount

Turn-Off Delay Time :

30 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

6A

Turn On Delay Time :

7 ns

Series :

CoolMOS™ C6

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 100V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Mounting Type :

Surface Mount