IPD60R280CFD7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

9A

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Vgs(th) (Max) @ Id :

4.5V @ 180μA

JESD-30 Code :

R-PSSO-G2

DS Breakdown Voltage-Min :

600V

Transistor Element Material :

SILICON

Power Dissipation-Max :

51W Tc

Surface Mount :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Published :

2014

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Terminal Finish :

Tin (Sn)

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

36 mJ

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

CoolMOS™ CFD7

Number of Terminations :

2

Factory Lead Time :

18 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

807pF @ 400V

Drain-source On Resistance-Max :

0.28Ohm

Case Connection :

DRAIN

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

31A

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

280m Ω @ 3.6A, 10V

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

650V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Number of Elements :

1