IPD60R1K5CEAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

CoolMOS™

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

18 Weeks

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Operating Temperature :

-40°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Dual Supply Voltage :

600V

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 1.1A, 10V

Vgs(th) (Max) @ Id :

3.5V @ 90µA

ECCN Code :

EAR99

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 100V

Drain to Source Voltage (Vdss) :

650V

Terminal Position :

Single

Number of Elements :

1

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Power Dissipation-Max :

49W Tc

Halogen Free :

Halogen Free

Pulsed Drain Current-Max (IDM) :

8A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Lead Free :

Contains Lead

Drain Current-Max (Abs) (ID) :

5A

Avalanche Energy Rating (Eas) :

26 mJ

FET Type :

N-Channel

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

9.4nC @ 10V

Transistor Element Material :

SILICON

Published :

2008

Case Connection :

DRAIN

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)