IPD60R1K5CEATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

28W Tc

Turn On Delay Time :

8 ns

Lead Free :

Lead Free

Series :

CoolMOS™ CE

Vgs(th) (Max) @ Id :

3.5V @ 90µA

Mounting Type :

Surface Mount

Fall Time (Typ) :

20 ns

Drain Current-Max (Abs) (ID) :

5A

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Element Configuration :

Single

Weight :

3.949996g

Number of Terminations :

2

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 1.1A, 10V

Pulsed Drain Current-Max (IDM) :

8A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

40 ns

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 100V

Case Connection :

DRAIN

Number of Channels :

1

Avalanche Energy Rating (Eas) :

26 mJ

Published :

2015

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Breakdown Voltage :

600V

Current - Continuous Drain (Id) @ 25°C :

3.1A Tc

Continuous Drain Current (ID) :

3.1A

Gate Charge (Qg) (Max) @ Vgs :

9.4nC @ 10V

Mount :

Surface Mount

FET Type :

N-Channel

Rise Time :

7ns

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Operating Temperature :

-40°C~150°C TJ