IPA65R660CFDXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSFM-T3

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Number of Terminations :

3

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

650V

Qualification Status :

Not Qualified

Published :

2008

Surface Mount :

No

Avalanche Energy Rating (Eas) :

115 mJ

Factory Lead Time :

16 Weeks

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Rds On (Max) @ Id, Vgs :

660m Ω @ 2.1A, 10V

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Package / Case :

TO-220-3 Full Pack

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4.5V @ 200μA

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

CoolMOS™

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

17A

Pbfree Code :

yes

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.66Ohm

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Drain Current-Max (Abs) (ID) :

6A

Case Connection :

Isolated

Input Capacitance (Ciss) (Max) @ Vds :

615pF @ 100V

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

27.8W Tc

Vgs (Max) :

±20V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

650V

FET Type :

N-Channel