IPA65R380E6XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 100V

Number of Terminations :

3

Factory Lead Time :

18 Weeks

Drain-source On Resistance-Max :

0.38Ohm

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

JESD-30 Code :

R-PSFM-T3

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Case Connection :

Isolated

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

380m Ω @ 3.2A, 10V

Current - Continuous Drain (Id) @ 25°C :

10.6A Tc

Terminal Position :

Single

Series :

CoolMOS™

Published :

2008

FET Type :

N-Channel

Pin Count :

3

DS Breakdown Voltage-Min :

650V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

29A

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

215 mJ

Transistor Application :

SWITCHING

Package / Case :

TO-220-3 Full Pack

Power Dissipation-Max :

31W Tc

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Drain to Source Voltage (Vdss) :

650V

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

3.5V @ 320µA

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE