IPA65R380C6XKSA1
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- Mfr.Part #
- IPA65R380C6XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 10.6A TO220
- Stock
- 83,144
- In Stock ：
- 83,144
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Halogen Free :
- Halogen Free
- Avalanche Energy Rating (Eas) :
- 215 mJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 3.5V @ 320µA
- Terminal Position :
- Single
- Turn-Off Delay Time :
- 110 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Pin Count :
- 3
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 10.6A Tc
- Package / Case :
- TO-220-3 Full Pack
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 10.6A
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 11 ns
- Pulsed Drain Current-Max (IDM) :
- 29A
- Series :
- CoolMOS™
- Published :
- 2008
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 710pF @ 100V
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Packaging :
- Tube
- Turn On Delay Time :
- 12 ns
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Max Dual Supply Voltage :
- 650V
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 12 Weeks
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 39nC @ 10V
- Case Connection :
- Isolated
- Power Dissipation-Max :
- 31W Tc
- Rds On (Max) @ Id, Vgs :
- 380m Ω @ 3.2A, 10V
- JEDEC-95 Code :
- TO-220AB
- Datasheets
- IPA65R380C6XKSA1
N-Channel Tube 380m Ω @ 3.2A, 10V ±20V 710pF @ 100V 39nC @ 10V TO-220-3 Full Pack
IPA65R380C6XKSA1 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 215 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 710pF @ 100V.This device has a continuous drain current (ID) of [10.6A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 110 ns.A maximum pulsed drain current of 29A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 650V.Its overall power consumption can be reduced by using drive voltage (10V).
IPA65R380C6XKSA1 Features
the avalanche energy rating (Eas) is 215 mJ
a continuous drain current (ID) of 10.6A
the turn-off delay time is 110 ns
based on its rated peak drain current 29A.
IPA65R380C6XKSA1 Applications
There are a lot of Infineon Technologies
IPA65R380C6XKSA1 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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