IPA65R310CFDXKSA1
- Mfr.Part #
- IPA65R310CFDXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 11.4A TO220
- Stock
- 2,345
- In Stock :
- 2,345
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Series :
- CoolMOS™
- Turn On Delay Time :
- 11 ns
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 10V
- Rise Time :
- 7.5ns
- Package / Case :
- TO-220-3 Full Pack
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Halogen Free :
- Halogen Free
- Fall Time (Typ) :
- 7 ns
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 310m Ω @ 4.4A, 10V
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 32W Tc
- Power Dissipation :
- 32W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 11.4A
- Avalanche Energy Rating (Eas) :
- 290 mJ
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-220AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 100V
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 18 Weeks
- Case Connection :
- Isolated
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 4.5V @ 440μA
- Vgs (Max) :
- ±20V
- Max Dual Supply Voltage :
- 650V
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Published :
- 2008
- Pbfree Code :
- yes
- Terminal Position :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 45 ns
- Current - Continuous Drain (Id) @ 25°C :
- 11.4A Tc
- Datasheets
- IPA65R310CFDXKSA1

N-Channel Tube 310m Ω @ 4.4A, 10V ±20V 1100pF @ 100V 41nC @ 10V TO-220-3 Full Pack
IPA65R310CFDXKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 290 mJ.A device's maximum input capacitance is 1100pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 11.4A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 45 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 650V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
IPA65R310CFDXKSA1 Features
the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 11.4A
the turn-off delay time is 45 ns
IPA65R310CFDXKSA1 Applications
There are a lot of Infineon Technologies
IPA65R310CFDXKSA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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