IPA65R280C6XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

280mOhm @ 4.4A, 10V

Input Capacitance :

950pF

Fall Time (Typ) :

12 ns

Continuous Drain Current (ID) :

13.8A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

105 ns

Factory Lead Time :

12 Weeks

Drain to Source Voltage (Vdss) :

650V

Power Dissipation :

32W

Power Dissipation-Max :

32W Tc

Published :

2008

Package / Case :

TO-220-3 Full Pack

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Packaging :

Tube

Number of Pins :

3

Vgs(th) (Max) @ Id :

3.5V @ 440µA

Current - Continuous Drain (Id) @ 25°C :

13.8A Tc

Series :

CoolMOS™

Supplier Device Package :

TO-220 Full Pack

Turn On Delay Time :

13 ns

Max Operating Temperature :

150°C

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Halogen Free :

Halogen Free

Drain to Source Breakdown Voltage :

700V

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 100V

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Rise Time :

11ns

FET Type :

N-Channel

Drain to Source Resistance :

280mOhm

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Rds On Max :

280 mΩ