IPA65R225C7XKSA1
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- Mfr.Part #
- IPA65R225C7XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 7A TO220-FP
- Stock
- 3
- In Stock ：
- 3
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 9 ns
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- Isolated
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 240µA
- Continuous Drain Current (ID) :
- 7A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- Power Dissipation-Max :
- 29W Tc
- Drain Current-Max (Abs) (ID) :
- 7A
- Fall Time (Typ) :
- 10 ns
- Drain-source On Resistance-Max :
- 0.225Ohm
- Factory Lead Time :
- 18 Weeks
- Packaging :
- Tube
- Turn-Off Delay Time :
- 48 ns
- Series :
- CoolMOS™ C7
- Number of Terminations :
- 3
- JEDEC-95 Code :
- TO-220AB
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2008
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Halogen Free :
- Halogen Free
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 41A
- Rds On (Max) @ Id, Vgs :
- 225m Ω @ 4.8A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 996pF @ 400V
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Terminal Finish :
- Tin (Sn)
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 48 mJ
- Package / Case :
- TO-220-3 Full Pack
- Rise Time :
- 6ns
- Max Dual Supply Voltage :
- 650V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Datasheets
- IPA65R225C7XKSA1
N-Channel Tube 225m Ω @ 4.8A, 10V ±20V 996pF @ 400V 20nC @ 10V TO-220-3 Full Pack
IPA65R225C7XKSA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 48 mJ.The maximum input capacitance of this device is 996pF @ 400V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 7A.As shown in the table below, the drain current of this device is 7A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 48 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 41A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 9 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 650V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.
IPA65R225C7XKSA1 Features
the avalanche energy rating (Eas) is 48 mJ
a continuous drain current (ID) of 7A
the turn-off delay time is 48 ns
based on its rated peak drain current 41A.
IPA65R225C7XKSA1 Applications
There are a lot of Infineon Technologies
IPA65R225C7XKSA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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