IPA65R190E6XKSA1
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- Mfr.Part #
- IPA65R190E6XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 20.2A TO220
- Stock
- 3,551
- In Stock ：
- 3,551
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Factory Lead Time :
- 12 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 20.2A Tc
- Case Connection :
- Isolated
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Package / Case :
- TO-220-3 Full Pack
- Number of Terminations :
- 3
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Power Dissipation-Max :
- 34W Tc
- JEDEC-95 Code :
- TO-220AB
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 34W
- Max Dual Supply Voltage :
- 650V
- Pin Count :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-609 Code :
- e3
- Pulsed Drain Current-Max (IDM) :
- 66A
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 20.8A
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 7.3A, 10V
- Vgs(th) (Max) @ Id :
- 3.5V @ 730µA
- Turn On Delay Time :
- 12 ns
- Qualification Status :
- Not Qualified
- Avalanche Energy Rating (Eas) :
- 485 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 112 ns
- Rise Time :
- 11ns
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 73nC @ 10V
- Halogen Free :
- Halogen Free
- Published :
- 2008
- Packaging :
- Tube
- Series :
- CoolMOS™
- Input Capacitance (Ciss) (Max) @ Vds :
- 1620pF @ 100V
- Fall Time (Typ) :
- 10 ns
- Datasheets
- IPA65R190E6XKSA1
N-Channel Tube 190m Ω @ 7.3A, 10V ±20V 1620pF @ 100V 73nC @ 10V TO-220-3 Full Pack
IPA65R190E6XKSA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 485 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1620pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 20.8A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 112 ns.Peak drain current is 66A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 650V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IPA65R190E6XKSA1 Features
the avalanche energy rating (Eas) is 485 mJ
a continuous drain current (ID) of 20.8A
the turn-off delay time is 112 ns
based on its rated peak drain current 66A.
IPA65R190E6XKSA1 Applications
There are a lot of Infineon Technologies
IPA65R190E6XKSA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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