IPA65R190C6XKSA1
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- Mfr.Part #
- IPA65R190C6XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 20.2A TO220
- Stock
- 7,043
- In Stock ：
- 7,043
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 66A
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 485 mJ
- Turn On Delay Time :
- 13 ns
- Terminal Position :
- Single
- Turn-Off Delay Time :
- 133 ns
- JEDEC-95 Code :
- TO-220AB
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 3.5V @ 730µA
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 7.3A, 10V
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-220-3 Full Pack
- Number of Terminations :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- CoolMOS™
- Max Dual Supply Voltage :
- 650V
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 1620pF @ 100V
- Power Dissipation :
- 34W
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 12ns
- ECCN Code :
- EAR99
- Factory Lead Time :
- 12 Weeks
- RoHS Status :
- RoHS Compliant
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 10 ns
- Published :
- 2011
- Gate Charge (Qg) (Max) @ Vgs :
- 73nC @ 10V
- Case Connection :
- Isolated
- Number of Elements :
- 1
- Number of Pins :
- 3
- Terminal Finish :
- Tin (Sn)
- Qualification Status :
- Not Qualified
- Halogen Free :
- Halogen Free
- Power Dissipation-Max :
- 34W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 20.2A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 20.2A
- Datasheets
- IPA65R190C6XKSA1
N-Channel Tube 190m Ω @ 7.3A, 10V ±20V 1620pF @ 100V 73nC @ 10V TO-220-3 Full Pack
IPA65R190C6XKSA1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 485 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1620pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 20.2A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 133 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 66A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 13 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 650V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPA65R190C6XKSA1 Features
the avalanche energy rating (Eas) is 485 mJ
a continuous drain current (ID) of 20.2A
the turn-off delay time is 133 ns
based on its rated peak drain current 66A.
IPA65R190C6XKSA1 Applications
There are a lot of Infineon Technologies
IPA65R190C6XKSA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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