IPA65R125C7XKSA1
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- Mfr.Part #
- IPA65R125C7XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 10A TO220-FP
- Stock
- 31,233
- In Stock ：
- 31,233
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Terminal Position :
- Single
- Published :
- 2008
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Avalanche Energy Rating (Eas) :
- 89 mJ
- Rise Time :
- 15ns
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Pulsed Drain Current-Max (IDM) :
- 75A
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-220-3 Full Pack
- Vgs(th) (Max) @ Id :
- 4V @ 440μA
- Halogen Free :
- Halogen Free
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 1670pF @ 400V
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Series :
- CoolMOS™ C7
- Continuous Drain Current (ID) :
- 10A
- Drain-source On Resistance-Max :
- 0.125Ohm
- Power Dissipation-Max :
- 32W Tc
- Factory Lead Time :
- 18 Weeks
- Rds On (Max) @ Id, Vgs :
- 125m Ω @ 8.9A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 71 ns
- JEDEC-95 Code :
- TO-220AB
- Fall Time (Typ) :
- 8 ns
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- Isolated
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Turn On Delay Time :
- 14 ns
- Max Dual Supply Voltage :
- 650V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Datasheets
- IPA65R125C7XKSA1
N-Channel Tube 125m Ω @ 8.9A, 10V ±20V 1670pF @ 400V 35nC @ 10V TO-220-3 Full Pack
IPA65R125C7XKSA1 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 89 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1670pF @ 400V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 10A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 71 ns.Peak drain current for this device is 75A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 14 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 650V.Using drive voltage (10V) reduces this device's overall power consumption.
IPA65R125C7XKSA1 Features
the avalanche energy rating (Eas) is 89 mJ
a continuous drain current (ID) of 10A
the turn-off delay time is 71 ns
based on its rated peak drain current 75A.
IPA65R125C7XKSA1 Applications
There are a lot of Infineon Technologies
IPA65R125C7XKSA1 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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