IPA60R800CEXKSA1
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- Mfr.Part #
- IPA60R800CEXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 5.6A TO220-FP
- Stock
- 6,158
- In Stock ：
- 6,158
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-220-3 Full Pack
- Weight :
- 2.299997g
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Lead Free
- Number of Channels :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Vgs (Max) :
- ±20V
- Mount :
- Through Hole
- Turn On Delay Time :
- 9 ns
- Max Dual Supply Voltage :
- 600V
- Rise Time :
- 7ns
- Series :
- CoolMOS™ CE
- FET Type :
- N-Channel
- JEDEC-95 Code :
- TO-220AB
- Factory Lead Time :
- 6 Weeks
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 27W Tc
- Drain to Source Breakdown Voltage :
- 600V
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 3.5V @ 170μA
- RoHS Status :
- RoHS Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 12 ns
- Rds On (Max) @ Id, Vgs :
- 800m Ω @ 2A, 10V
- Operating Temperature :
- -40°C~150°C TJ
- Continuous Drain Current (ID) :
- 5.6A
- Gate Charge (Qg) (Max) @ Vgs :
- 17.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 373pF @ 100V
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 72 mJ
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2008
- Turn-Off Delay Time :
- 50 ns
- Number of Terminations :
- 3
- Case Connection :
- Isolated
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 5.6A Tc
- Halogen Free :
- Halogen Free
- Drain-source On Resistance-Max :
- 0.8Ohm
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Datasheets
- IPA60R800CEXKSA1
N-Channel Tube 800m Ω @ 2A, 10V ±20V 373pF @ 100V 17.2nC @ 10V TO-220-3 Full Pack
IPA60R800CEXKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 72 mJ.A device's maximum input capacitance is 373pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 5.6A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 50 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 600V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
IPA60R800CEXKSA1 Features
the avalanche energy rating (Eas) is 72 mJ
a continuous drain current (ID) of 5.6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 50 ns
IPA60R800CEXKSA1 Applications
There are a lot of Infineon Technologies
IPA60R800CEXKSA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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