IPA60R750E6XKSA1
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- Mfr.Part #
- IPA60R750E6XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 5.7A TO220-FP
- Stock
- 43,253
- In Stock ：
- 43,253
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Fall Time (Typ) :
- 12 ns
- Number of Pins :
- 3
- Terminal Finish :
- Tin (Sn)
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 17.2nC @ 10V
- Halogen Free :
- Halogen Free
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 20V
- Avalanche Energy Rating (Eas) :
- 72 mJ
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 5.7A
- Turn-Off Delay Time :
- 50 ns
- Series :
- CoolMOS™
- Number of Terminations :
- 3
- Terminal Position :
- Single
- Case Connection :
- Isolated
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation :
- 27W
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3 Full Pack
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 750m Ω @ 2A, 10V
- Pbfree Code :
- yes
- Turn On Delay Time :
- 9 ns
- Power Dissipation-Max :
- 27W Tc
- Vgs (Max) :
- ±20V
- Max Dual Supply Voltage :
- 600V
- Rise Time :
- 7ns
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 3.5V @ 170μA
- JEDEC-95 Code :
- TO-220AB
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 12 Weeks
- Published :
- 2008
- Drain-source On Resistance-Max :
- 0.75Ohm
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 373pF @ 100V
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 5.7A Tc
- Datasheets
- IPA60R750E6XKSA1
N-Channel Tube 750m Ω @ 2A, 10V ±20V 373pF @ 100V 17.2nC @ 10V TO-220-3 Full Pack
IPA60R750E6XKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 72 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 373pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 50 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 600V.In addition to reducing power consumption, this device uses drive voltage (10V).
IPA60R750E6XKSA1 Features
the avalanche energy rating (Eas) is 72 mJ
a continuous drain current (ID) of 5.7A
the turn-off delay time is 50 ns
IPA60R750E6XKSA1 Applications
There are a lot of Infineon Technologies
IPA60R750E6XKSA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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