IPA60R600P7XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Channels :

1

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

21W Tc

Series :

CoolMOS™ P7

Factory Lead Time :

18 Weeks

Rds On (Max) @ Id, Vgs :

600m Ω @ 1.7A, 10V

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Case Connection :

Isolated

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

FET Type :

N-Channel

Package / Case :

TO-220-3 Full Pack

Turn On Delay Time :

7 ns

Turn-Off Delay Time :

37 ns

Transistor Element Material :

SILICON

Terminal Position :

Single

Power Dissipation :

21W

Drain-source On Resistance-Max :

0.6Ohm

Packaging :

Tube

Height :

20.7mm

Max Junction Temperature (Tj) :

150°C

Vgs(th) (Max) @ Id :

4V @ 80μA

Drain to Source Breakdown Voltage :

600V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

6A

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

363pF @ 400V

Transistor Application :

SWITCHING

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Number of Terminations :

3

Published :

2014

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

Not Applicable