IPA60R600CPXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

600m Ω @ 3.3A, 10V

Surface Mount :

No

Number of Terminations :

3

JESD-30 Code :

R-PSFM-T3

Pin Count :

3

Terminal Position :

Single

Power Dissipation-Max :

28W Tc

Published :

2008

Drain-source On Resistance-Max :

0.6Ohm

Qualification Status :

Not Qualified

JESD-609 Code :

e3

FET Type :

N-Channel

Reach Compliance Code :

Compliant

Avalanche Energy Rating (Eas) :

144 mJ

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 100V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

600V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

6.1A Tc

Case Connection :

Isolated

Package / Case :

TO-220-3 Full Pack

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Packaging :

Tube

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

600V

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

15A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

6.1A

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

CoolMOS™

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Vgs(th) (Max) @ Id :

3.5V @ 220µA