IPA60R520E6XKSA1
- Mfr.Part #
- IPA60R520E6XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 8.1A TO220-FP
- Stock
- 17,234
- In Stock :
- 17,234
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2008
- Number of Pins :
- 3
- Pulsed Drain Current-Max (IDM) :
- 22A
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Halogen Free :
- Halogen Free
- Fall Time (Typ) :
- 9 ns
- Max Dual Supply Voltage :
- 600V
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 29W Tc
- Number of Terminations :
- 3
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- RoHS Status :
- RoHS Compliant
- Turn-Off Delay Time :
- 75 ns
- Package / Case :
- TO-220-3 Full Pack
- Gate Charge (Qg) (Max) @ Vgs :
- 23.4nC @ 10V
- Series :
- CoolMOS™
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 3.5V @ 230μA
- Mount :
- Through Hole
- Drain-source On Resistance-Max :
- 0.52Ohm
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 520m Ω @ 2.8A, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 8.1A Tc
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 512pF @ 100V
- Terminal Finish :
- Tin (Sn)
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 12 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rise Time :
- 10ns
- Case Connection :
- Isolated
- Continuous Drain Current (ID) :
- 8.1A
- JEDEC-95 Code :
- TO-220AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Datasheets
- IPA60R520E6XKSA1

N-Channel Tube 520m Ω @ 2.8A, 10V ±20V 512pF @ 100V 23.4nC @ 10V TO-220-3 Full Pack
IPA60R520E6XKSA1 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 512pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 8.1A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 75 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 22A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 12 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 600V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPA60R520E6XKSA1 Features
a continuous drain current (ID) of 8.1A
the turn-off delay time is 75 ns
based on its rated peak drain current 22A.
IPA60R520E6XKSA1 Applications
There are a lot of Infineon Technologies
IPA60R520E6XKSA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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