IPA60R520CP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Subcategory :

FET General Purpose Power

Drain Current-Max (Abs) (ID) :

6.8 A

Input Capacitance (Ciss) (Max) @ Vds :

630 pF @ 100 V

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

520mOhm @ 3.8A, 10V

DS Breakdown Voltage-Min :

600 V

Package :

Bulk

Pulsed Drain Current-Max (IDM) :

17 A

Continuous Drain Current (ID) :

6.8 A

Manufacturer :

Infineon Technologies AG

Number of Terminals :

3

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

600 V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Factory Lead Time :

1 Week

Rise Time :

12 ns

Power Dissipation-Max (Abs) :

30 W

ECCN Code :

EAR99

Channel Type :

N

Vgs(th) (Max) @ Id :

3.5V @ 250µA

REACH SVHC :

No SVHC

Case Connection :

Isolated

Halogen Free :

Halogen Free

Number of Elements :

1

Package Shape :

RECTANGULAR

Technology :

MOSFET (Metal Oxide)

Power Dissipation :

30 W

JESD-30 Code :

R-PSFM-T3

Polarity/Channel Type :

N-Channel

Min Operating Temperature :

-55 °C

Max Operating Temperature :

150 °C

Drain to Source Breakdown Voltage :

600 V

Reach Compliance Code :

Compliant

FET Type :

N-Channel

Package / Case :

TO-220-3 Full Pack

Surface Mount :

No

Operating Temperature :

-55°C ~ 150°C (TJ)

Element Configuration :

Single

Drain to Source Resistance :

520 mΩ

Mounting Type :

Through Hole

Continuous Drain Current Id :

6.8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

20 V

Max Power Dissipation :

30 W

Vgs (Max) :

±20V

Drive Voltage (Max Rds On, Min Rds On) :

10V

RoHS :

Compliant

Drain-source On Resistance-Max :

0.52 Ω

Rds On Max :

520 mΩ

Series :

CoolMOS™

Terminal Form :

THROUGH-HOLE

Power Dissipation (Max) :

30W (Tc)

Supplier Device Package :

PG-TO220-3-111

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn-Off Delay Time :

74 ns

JEDEC-95 Code :

TO-220AB

Product Status :

Active

Avalanche Energy Rating (Eas) :

166 mJ

Threshold Voltage :

3 V

Input Capacitance :

630 pF

Gate Charge (Qg) (Max) @ Vgs :

31 nC @ 10 V

Transistor Element Material :

SILICON

FET Feature :

-

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

6.8A (Tc)