IPA60R520C6XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3 Full Pack

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Qualification Status :

Not Qualified

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

512pF @ 100V

Transistor Application :

SWITCHING

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

600V

Reach Compliance Code :

Compliant

Pulsed Drain Current-Max (IDM) :

22A

DS Breakdown Voltage-Min :

600V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

52 Weeks

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

8.1A Tc

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Packaging :

Tube

Pin Count :

3

Rds On (Max) @ Id, Vgs :

520m Ω @ 2.8A, 10V

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.52Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

23.4nC @ 10V

Drain Current-Max (Abs) (ID) :

8.1A

Avalanche Energy Rating (Eas) :

153 mJ

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

29W Tc

Case Connection :

Isolated

RoHS Status :

RoHS Compliant

Surface Mount :

No

Published :

2008

Vgs(th) (Max) @ Id :

3.5V @ 230μA

Series :

CoolMOS™