IPA60R460CEXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

3.5V @ 280μA

Published :

2008

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Weight :

2.299997g

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Packaging :

Tube

ECCN Code :

EAR99

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

9.1A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

CoolMOS™ CE

Vgs (Max) :

±20V

Number of Terminations :

3

Pbfree Code :

yes

Rise Time :

9ns

Max Dual Supply Voltage :

600V

Operating Temperature :

-40°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 100V

Drain-source On Resistance-Max :

0.46Ohm

Number of Channels :

1

Fall Time (Typ) :

10 ns

Case Connection :

Isolated

Turn On Delay Time :

11 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Continuous Drain Current (ID) :

9.1A

Factory Lead Time :

18 Weeks

JESD-609 Code :

e3

JEDEC-95 Code :

TO-220AB

Turn-Off Delay Time :

70 ns

Package / Case :

TO-220-3 Full Pack

Pulsed Drain Current-Max (IDM) :

26A

Halogen Free :

Halogen Free

Rds On (Max) @ Id, Vgs :

460m Ω @ 3.4A, 10V

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

30W Tc