IPA60R385CPXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Case Connection :

Isolated

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

Pulsed Drain Current-Max (IDM) :

27A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3.5V @ 340µA

DS Breakdown Voltage-Min :

650V

Drain to Source Voltage (Vdss) :

600V

Terminal Finish :

Tin (Sn)

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Package / Case :

TO-220-3 Full Pack

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Pin Count :

3

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.385Ohm

Surface Mount :

No

Published :

2007

Drain Current-Max (Abs) (ID) :

9A

Rds On (Max) @ Id, Vgs :

385m Ω @ 5.2A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

790pF @ 100V

Transistor Application :

SWITCHING

Factory Lead Time :

16 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

227 mJ

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Power Dissipation-Max :

31W Tc

ECCN Code :

EAR99

JESD-609 Code :

e3

Series :

CoolMOS™