IPA60R299CPXK

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.299Ohm

DS Breakdown Voltage-Min :

600V

Drain Current-Max (Abs) (ID) :

11A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

290 mJ

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

600V

Published :

2008

Terminal Finish :

Tin (Sn)

Package / Case :

TO-220-3 Full Pack

Vgs(th) (Max) @ Id :

3.5V @ 440µA

Transistor Element Material :

SILICON

Power Dissipation-Max :

33W Tc

Rds On (Max) @ Id, Vgs :

299m Ω @ 6.6A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

Number of Elements :

1

Terminal Position :

Single

Case Connection :

Isolated

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Series :

CoolMOS™

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

34A

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Pin Count :

3

Number of Terminations :

3