IPA60R280E6XKSA1
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- Mfr.Part #
- IPA60R280E6XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 13.8A TO220-FP
- Stock
- 20,680
- In Stock ：
- 20,680
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Terminal Finish :
- Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- JEDEC-95 Code :
- TO-220AB
- Case Connection :
- Isolated
- Input Capacitance (Ciss) (Max) @ Vds :
- 950pF @ 100V
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Max Dual Supply Voltage :
- 600V
- Pulsed Drain Current-Max (IDM) :
- 40A
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 32W Tc
- Drain-source On Resistance-Max :
- 0.28Ohm
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 280m Ω @ 6.5A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Factory Lead Time :
- 12 Weeks
- Transistor Element Material :
- SILICON
- Halogen Free :
- Halogen Free
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 13.8A Tc
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-220-3 Full Pack
- Power Dissipation :
- 32W
- Series :
- CoolMOS™
- Mount :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 284 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 3.5V @ 430μA
- ECCN Code :
- EAR99
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2008
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 13.8A
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IPA60R280E6XKSA1
N-Channel Tube 280m Ω @ 6.5A, 10V ±20V 950pF @ 100V 43nC @ 10V TO-220-3 Full Pack
IPA60R280E6XKSA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 284 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 950pF @ 100V.This device conducts a continuous drain current (ID) of 13.8A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 40A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 600V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPA60R280E6XKSA1 Features
the avalanche energy rating (Eas) is 284 mJ
a continuous drain current (ID) of 13.8A
based on its rated peak drain current 40A.
IPA60R280E6XKSA1 Applications
There are a lot of Infineon Technologies
IPA60R280E6XKSA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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