IPA60R1K0CEXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

26W Tc

Number of Elements :

1

Factory Lead Time :

18 Weeks

Number of Terminations :

3

Package / Case :

TO-220-3 Full Pack

Vgs(th) (Max) @ Id :

3.5V @ 130μA

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

CoolMOS™

Case Connection :

Isolated

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

1 Ω @ 1.5A, 10V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

6.8A Tc

JESD-609 Code :

e3

Halogen Free :

Halogen Free

Max Dual Supply Voltage :

600V

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2013

Pbfree Code :

yes

FET Type :

N-Channel

Drain-source On Resistance-Max :

1Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

6.8A

Terminal Position :

Single

Operating Temperature :

-40°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

12A

FET Feature :

Super Junction

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

Avalanche Energy Rating (Eas) :

46 mJ

JESD-30 Code :

R-PSFM-T3