IPA60R199CPXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Published :

2007

Lead Free :

Lead Free

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

199m Ω @ 9.9A, 10V

Drain to Source Voltage (Vdss) :

650V

Package / Case :

TO-220-3 Full Pack

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

JEDEC-95 Code :

TO-220AB

Factory Lead Time :

16 Weeks

Series :

CoolMOS™

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Turn-Off Delay Time :

50 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

Isolated

FET Type :

N-Channel

Number of Pins :

3

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

16A

ECCN Code :

EAR99

JESD-609 Code :

e3

Rise Time :

5ns

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3.5V @ 1.1mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Mount :

Through Hole

Turn On Delay Time :

10 ns

Mounting Type :

Through Hole

Max Dual Supply Voltage :

600V

Power Dissipation :

34W

Halogen Free :

Halogen Free

Terminal Finish :

Tin (Sn)

Terminal Position :

Single

Power Dissipation-Max :

34W Tc

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1520pF @ 100V