IPA60R165CPXKSA1
- Mfr.Part #
- IPA60R165CPXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 21A TO220-FP
- Stock
- 24,739
- In Stock :
- 24,739
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Halogen Free :
- Halogen Free
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Series :
- CoolMOS™
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 2000pF @ 100V
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) :
- 21A
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 52nC @ 10V
- Power Dissipation-Max :
- 34W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 21A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Max Dual Supply Voltage :
- 600V
- JEDEC-95 Code :
- TO-220AB
- Terminal Position :
- Single
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 165m Ω @ 12A, 10V
- Rise Time :
- 5ns
- Power Dissipation :
- 34W
- Packaging :
- Tube
- Published :
- 2008
- Factory Lead Time :
- 8 Weeks
- JESD-609 Code :
- e3
- DS Breakdown Voltage-Min :
- 650V
- Turn-Off Delay Time :
- 50 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 522 mJ
- Turn On Delay Time :
- 12 ns
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Case Connection :
- Isolated
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-220-3 Full Pack
- Terminal Finish :
- Tin (Sn)
- Vgs(th) (Max) @ Id :
- 3.5V @ 660µA
- Datasheets
- IPA60R165CPXKSA1

N-Channel Tube 165m Ω @ 12A, 10V ±20V 2000pF @ 100V 52nC @ 10V TO-220-3 Full Pack
IPA60R165CPXKSA1 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 522 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2000pF @ 100V.This device has a continuous drain current (ID) of [21A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 50 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 600V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 650V.Its overall power consumption can be reduced by using drive voltage (10V).
IPA60R165CPXKSA1 Features
the avalanche energy rating (Eas) is 522 mJ
a continuous drain current (ID) of 21A
the turn-off delay time is 50 ns
IPA60R165CPXKSA1 Applications
There are a lot of Infineon Technologies
IPA60R165CPXKSA1 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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