IPA60R125P6XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Case Connection :

Isolated

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

2660pF @ 100V

Number of Terminations :

3

Continuous Drain Current (ID) :

30A

Current - Continuous Drain (Id) @ 25°C :

30A Tc

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Terminal Position :

Single

Power Dissipation-Max :

34W Tc

Drain-source On Resistance-Max :

0.125Ohm

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Number of Elements :

1

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

TO-220AB

Halogen Free :

Halogen Free

FET Type :

N-Channel

Factory Lead Time :

18 Weeks

Number of Pins :

3

Series :

CoolMOS™ P6

Package / Case :

TO-220-3 Full Pack

Mount :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

125m Ω @ 11.6A, 10V

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Mounting Type :

Through Hole

Max Dual Supply Voltage :

600V

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

87A

Turn-Off Delay Time :

44 ns

Turn On Delay Time :

14 ns

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4.5V @ 960μA

Terminal Finish :

Tin (Sn)

Published :

2008

Fall Time (Typ) :

5 ns

Rise Time :

9ns

Vgs (Max) :

±20V