IPA50R950CEXKSA2
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- Mfr.Part #
- IPA50R950CEXKSA2
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 3.7A TO220
- Stock
- 13,509
- In Stock ：
- 13,509
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 7 ns
- Number of Elements :
- 1
- Halogen Free :
- Halogen Free
- Current - Continuous Drain (Id) @ 25°C :
- 3.7A Tc
- Package / Case :
- TO-220-3 Full Pack
- JEDEC-95 Code :
- TO-220AB
- Transistor Application :
- SWITCHING
- Rise Time :
- 4.9ns
- Operating Temperature :
- -40°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 68 mJ
- Turn-Off Delay Time :
- 25 ns
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 25.7W Tc
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 950m Ω @ 1.2A, 13V
- Factory Lead Time :
- 18 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Published :
- 2008
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 3.7A
- Drive Voltage (Max Rds On,Min Rds On) :
- 13V
- Number of Pins :
- 3
- Terminal Finish :
- Tin (Sn)
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Case Connection :
- Isolated
- Gate Charge (Qg) (Max) @ Vgs :
- 10.5nC @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pulsed Drain Current-Max (IDM) :
- 12.8A
- Number of Terminations :
- 3
- Drain-source On Resistance-Max :
- 0.95Ohm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 3.5V @ 100µA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Dual Supply Voltage :
- 500V
- Packaging :
- Tube
- Fall Time (Typ) :
- 19.5 ns
- Series :
- CoolMOS™ CE
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 30V
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 231pF @ 100V
- Datasheets
- IPA50R950CEXKSA2
N-Channel Tube 950m Ω @ 1.2A, 13V ±20V 231pF @ 100V 10.5nC @ 10V TO-220-3 Full Pack
IPA50R950CEXKSA2 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 68 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 231pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 3.7A amps.It is [25 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 12.8A.A turn-on delay time of 7 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.As it is powered by 500V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (13V).
IPA50R950CEXKSA2 Features
the avalanche energy rating (Eas) is 68 mJ
a continuous drain current (ID) of 3.7A
the turn-off delay time is 25 ns
based on its rated peak drain current 12.8A.
IPA50R950CEXKSA2 Applications
There are a lot of Infineon Technologies
IPA50R950CEXKSA2 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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