IPA50R190CE

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Power Dissipation-Max :

32W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.19Ohm

Pulsed Drain Current-Max (IDM) :

63A

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

13V

DS Breakdown Voltage-Min :

500V

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

18.5A Tc

Packaging :

Tube

FET Feature :

Super Junction

Published :

2008

Drain to Source Voltage (Vdss) :

500V

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3 Full Pack

Number of Elements :

1

Pin Count :

3

Reach Compliance Code :

Compliant

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

190m Ω @ 6.2A, 13V

Avalanche Energy Rating (Eas) :

339 mJ

RoHS Status :

RoHS Compliant

Surface Mount :

No

Vgs(th) (Max) @ Id :

3.5V @ 510μA

Transistor Application :

SWITCHING

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1137pF @ 100V

Series :

CoolMOS™

Gate Charge (Qg) (Max) @ Vgs :

47.2nC @ 10V

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED