IPA50R380CEXKSA2
- Mfr.Part #
- IPA50R380CEXKSA2
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 6.3A TO220
- Stock
- 19,994
- In Stock :
- 19,994
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- CoolMOS™ CE
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 6.3A Tc
- Fall Time (Typ) :
- 8 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 584pF @ 100V
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 380m Ω @ 3.2A, 13V
- Lead Free :
- Lead Free
- Halogen Free :
- Halogen Free
- Vgs (Max) :
- ±20V
- Max Dual Supply Voltage :
- 500V
- Turn-Off Delay Time :
- 56 ns
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-220AB
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-220-3 Full Pack
- Number of Elements :
- 1
- Terminal Position :
- Single
- Mounting Type :
- Through Hole
- Published :
- 2008
- Gate Charge (Qg) (Max) @ Vgs :
- 24.8nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 13V
- Vgs(th) (Max) @ Id :
- 3.5V @ 260μA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Factory Lead Time :
- 18 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 6.3A
- Number of Terminations :
- 3
- Operating Temperature :
- -40°C~150°C TJ
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Case Connection :
- Isolated
- Rise Time :
- 9ns
- Power Dissipation-Max :
- 29.2W Tc
- Turn On Delay Time :
- 11 ns
- Avalanche Energy Rating (Eas) :
- 210 mJ
- Datasheets
- IPA50R380CEXKSA2
IPA50R380CEXKSA2 Documents

N-Channel Tube 380m Ω @ 3.2A, 13V ±20V 584pF @ 100V 24.8nC @ 10V TO-220-3 Full Pack
IPA50R380CEXKSA2 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 210 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 584pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 6.3A amps.It is [56 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 11 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 500V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (13V).
IPA50R380CEXKSA2 Features
the avalanche energy rating (Eas) is 210 mJ
a continuous drain current (ID) of 6.3A
the turn-off delay time is 56 ns
IPA50R380CEXKSA2 Applications
There are a lot of Infineon Technologies
IPA50R380CEXKSA2 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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