IPA50R380CEXKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

56 ns

Operating Temperature :

-40°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

24.8nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Published :

2008

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

380m Ω @ 3.2A, 13V

Avalanche Energy Rating (Eas) :

210 mJ

Max Dual Supply Voltage :

500V

Continuous Drain Current (ID) :

6.3A

Factory Lead Time :

18 Weeks

Terminal Position :

Single

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

Series :

CoolMOS™ CE

Rise Time :

9ns

Number of Elements :

1

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

584pF @ 100V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

8 ns

JESD-609 Code :

e3

Pbfree Code :

yes

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

6.3A Tc

Mounting Type :

Through Hole

Mount :

Through Hole

Halogen Free :

Halogen Free

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3 Full Pack

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3.5V @ 260μA

Turn On Delay Time :

11 ns

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

Isolated

Transistor Element Material :

SILICON

Power Dissipation-Max :

29.2W Tc

Drive Voltage (Max Rds On,Min Rds On) :

13V