IPA50R380CEXKSA2
- Mfr.Part #
- IPA50R380CEXKSA2
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 6.3A TO220
- Stock
- 19,994
- In Stock :
- 19,994
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-220-3 Full Pack
- Factory Lead Time :
- 18 Weeks
- Continuous Drain Current (ID) :
- 6.3A
- Published :
- 2008
- Current - Continuous Drain (Id) @ 25°C :
- 6.3A Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 584pF @ 100V
- Terminal Position :
- Single
- Pbfree Code :
- yes
- Series :
- CoolMOS™ CE
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 24.8nC @ 10V
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 8 ns
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 210 mJ
- Transistor Application :
- SWITCHING
- Halogen Free :
- Halogen Free
- Turn-Off Delay Time :
- 56 ns
- Case Connection :
- Isolated
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tube
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 29.2W Tc
- Rise Time :
- 9ns
- FET Type :
- N-Channel
- Mount :
- Through Hole
- Turn On Delay Time :
- 11 ns
- Max Dual Supply Voltage :
- 500V
- Rds On (Max) @ Id, Vgs :
- 380m Ω @ 3.2A, 13V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 13V
- JEDEC-95 Code :
- TO-220AB
- Vgs(th) (Max) @ Id :
- 3.5V @ 260μA
- Operating Temperature :
- -40°C~150°C TJ
- Datasheets
- IPA50R380CEXKSA2
IPA50R380CEXKSA2 Documents

N-Channel Tube 380m Ω @ 3.2A, 13V ±20V 584pF @ 100V 24.8nC @ 10V TO-220-3 Full Pack
IPA50R380CEXKSA2 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 210 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 584pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 6.3A amps.It is [56 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 11 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 500V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (13V).
IPA50R380CEXKSA2 Features
the avalanche energy rating (Eas) is 210 mJ
a continuous drain current (ID) of 6.3A
the turn-off delay time is 56 ns
IPA50R380CEXKSA2 Applications
There are a lot of Infineon Technologies
IPA50R380CEXKSA2 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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