IPA50R399CPXKSA1
- Mfr.Part #
- IPA50R399CPXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 9A TO220-FP
- Stock
- 37,468
- In Stock :
- 37,468
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 10V
- Qualification Status :
- Not Qualified
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 500V
- Reach Compliance Code :
- Compliant
- Case Connection :
- Isolated
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 12 Weeks
- Published :
- 2011
- Surface Mount :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- JEDEC-95 Code :
- TO-220AB
- Rds On (Max) @ Id, Vgs :
- 399m Ω @ 4.9A, 10V
- Package / Case :
- TO-220-3 Full Pack
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 3
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 83W Tc
- RoHS Status :
- RoHS Compliant
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 890pF @ 100V
- DS Breakdown Voltage-Min :
- 500V
- Drain-source On Resistance-Max :
- 0.399Ohm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSFM-T3
- Mounting Type :
- Through Hole
- Terminal Position :
- Single
- Drain Current-Max (Abs) (ID) :
- 9A
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 3.5V @ 330μA
- Terminal Finish :
- Tin (Sn)
- Pulsed Drain Current-Max (IDM) :
- 20A
- Avalanche Energy Rating (Eas) :
- 215 mJ
- Series :
- CoolMOS™
- Datasheets
- IPA50R399CPXKSA1

N-Channel Tube 399m Ω @ 4.9A, 10V ±20V 890pF @ 100V 23nC @ 10V 500V TO-220-3 Full Pack
IPA50R399CPXKSA1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 215 mJ.A device's maximal input capacitance is 890pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 9A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 20A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IPA50R399CPXKSA1 Features
the avalanche energy rating (Eas) is 215 mJ
based on its rated peak drain current 20A.
a 500V drain to source voltage (Vdss)
IPA50R399CPXKSA1 Applications
There are a lot of Infineon Technologies
IPA50R399CPXKSA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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