IPA50R399CPXKSA1

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Mfr.Part #
IPA50R399CPXKSA1
Manufacturer
Infineon Technologies
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 500V 9A TO220-FP
Stock
37,468
In Stock :
37,468

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 10V
Qualification Status :
Not Qualified
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Voltage (Vdss) :
500V
Reach Compliance Code :
Compliant
Case Connection :
Isolated
Operating Temperature :
-55°C~150°C TJ
Factory Lead Time :
12 Weeks
Published :
2011
Surface Mount :
No
Operating Mode :
ENHANCEMENT MODE
Pin Count :
3
Pbfree Code :
yes
Current - Continuous Drain (Id) @ 25°C :
9A Tc
JEDEC-95 Code :
TO-220AB
Rds On (Max) @ Id, Vgs :
399m Ω @ 4.9A, 10V
Package / Case :
TO-220-3 Full Pack
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Terminations :
3
Number of Elements :
1
FET Type :
N-Channel
Power Dissipation-Max :
83W Tc
RoHS Status :
RoHS Compliant
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
890pF @ 100V
DS Breakdown Voltage-Min :
500V
Drain-source On Resistance-Max :
0.399Ohm
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-30 Code :
R-PSFM-T3
Mounting Type :
Through Hole
Terminal Position :
Single
Drain Current-Max (Abs) (ID) :
9A
Packaging :
Tube
JESD-609 Code :
e3
Vgs(th) (Max) @ Id :
3.5V @ 330μA
Terminal Finish :
Tin (Sn)
Pulsed Drain Current-Max (IDM) :
20A
Avalanche Energy Rating (Eas) :
215 mJ
Series :
CoolMOS™
Datasheets
IPA50R399CPXKSA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPA50R399CPXKSA1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3 Full Pack, Number of Terminations:3, Mounting Type:Through Hole, IPA50R399CPXKSA1 pinout, IPA50R399CPXKSA1 datasheet PDF, IPA50R399CPXKSA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPA50R399CPXKSA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPA50R399CPXKSA1


N-Channel Tube 399m Ω @ 4.9A, 10V ±20V 890pF @ 100V 23nC @ 10V 500V TO-220-3 Full Pack

IPA50R399CPXKSA1 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 215 mJ.A device's maximal input capacitance is 890pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 9A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 20A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IPA50R399CPXKSA1 Features


the avalanche energy rating (Eas) is 215 mJ
based on its rated peak drain current 20A.
a 500V drain to source voltage (Vdss)


IPA50R399CPXKSA1 Applications


There are a lot of Infineon Technologies
IPA50R399CPXKSA1 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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