IPA50R350CPXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Pin Count :

3

Vgs(th) (Max) @ Id :

3.5V @ 370µA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Number of Terminations :

3

Package / Case :

TO-220-3 Full Pack

Power Dissipation-Max :

32W Tc

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

22A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Published :

2011

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-220AB

Terminal Position :

Single

Case Connection :

Isolated

Number of Elements :

1

Transistor Application :

SWITCHING

FET Type :

N-Channel

Qualification Status :

Not Qualified

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1020pF @ 100V

DS Breakdown Voltage-Min :

500V

Pbfree Code :

yes

Series :

CoolMOS™

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.35Ohm

Avalanche Energy Rating (Eas) :

246 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

10A

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

350m Ω @ 5.6A, 10V

Drain to Source Voltage (Vdss) :

500V