IPA50R299CP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Turn-Off Delay Time :

80 ns

Number of Terminations :

3

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

1190pF @ 100V

Mounting Type :

Through Hole

Terminal Finish :

Tin (Sn)

Rise Time :

14ns

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

26A

Rds On (Max) @ Id, Vgs :

299m Ω @ 6.6A, 10V

ECCN Code :

EAR99

Case Connection :

Isolated

Package / Case :

TO-220-3 Full Pack

Turn On Delay Time :

35 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Published :

2008

Drain-source On Resistance-Max :

0.299Ohm

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

12 Weeks

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

550V

FET Type :

N-Channel

Fall Time (Typ) :

12 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

104W Tc

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3.5V @ 440µA

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Halogen Free :

Halogen Free

Current - Continuous Drain (Id) @ 25°C :

12A Tc

RoHS Status :

RoHS Compliant

Series :

CoolMOS™

Continuous Drain Current (ID) :

12A

Vgs (Max) :

±20V

Power Dissipation :

104W

Mount :

Through Hole

Number of Pins :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

289 mJ

Max Dual Supply Voltage :

500V

Transistor Element Material :

SILICON