IPA50R199CPXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

Isolated

Vgs (Max) :

±20V

Nominal Vgs :

3 V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Width :

4.85mm

Drain-source On Resistance-Max :

0.199Ohm

REACH SVHC :

No SVHC

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 100V

Halogen Free :

Halogen Free

Fall Time (Typ) :

10 ns

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

3.5V @ 660µA

Length :

10.65mm

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

35 ns

Package / Case :

TO-220-3 Full Pack

Drain to Source Breakdown Voltage :

500V

Transistor Application :

SWITCHING

HTS Code :

8541.29.00.95

Height :

16.15mm

Surface Mount :

No

Number of Pins :

3

Turn-Off Delay Time :

80 ns

Transistor Element Material :

SILICON

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

17A

JESD-609 Code :

e3

Rise Time :

14ns

Termination :

Through Hole

Dual Supply Voltage :

550V

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Series :

CoolMOS™

Pbfree Code :

yes

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

199m Ω @ 9.9A, 10V

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Published :

2008

Power Dissipation-Max :

139W Tc

Element Configuration :

Single

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

40A

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Power Dissipation :

139W

Operating Temperature :

-55°C~150°C TJ