IPA50R199CPXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3.5V @ 660µA

Published :

2008

Rise Time :

14ns

Transistor Application :

SWITCHING

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Turn-Off Delay Time :

80 ns

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

500V

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

REACH SVHC :

No SVHC

Length :

10.65mm

Height :

16.15mm

Drain-source On Resistance-Max :

0.199Ohm

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Power Dissipation-Max :

139W Tc

Number of Elements :

1

Surface Mount :

No

Package / Case :

TO-220-3 Full Pack

Dual Supply Voltage :

550V

Power Dissipation :

139W

Number of Terminations :

3

Packaging :

Tube

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Case Connection :

Isolated

Fall Time (Typ) :

10 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Nominal Vgs :

3 V

Continuous Drain Current (ID) :

17A

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

40A

Series :

CoolMOS™

Halogen Free :

Halogen Free

HTS Code :

8541.29.00.95

Termination :

Through Hole

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 100V

Rds On (Max) @ Id, Vgs :

199m Ω @ 9.9A, 10V

JESD-609 Code :

e3

Width :

4.85mm

Number of Pins :

3

Turn On Delay Time :

35 ns