IPA50R280CE

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.28Ohm

Vgs(th) (Max) @ Id :

3.5V @ 350μA

Published :

2008

RoHS Status :

RoHS Compliant

JEDEC-95 Code :

TO-220AB

Terminal Position :

Single

DS Breakdown Voltage-Min :

500V

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

231 mJ

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

280m Ω @ 4.2A, 13V

Series :

CoolMOS™

Drive Voltage (Max Rds On,Min Rds On) :

13V

JESD-30 Code :

R-PSFM-T3

Drain to Source Voltage (Vdss) :

500V

Surface Mount :

No

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

42.9A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Feature :

Super Junction

Gate Charge (Qg) (Max) @ Vgs :

32.6nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

30.4W Tc

Pin Count :

3

Pbfree Code :

yes

Reach Compliance Code :

Compliant

FET Type :

N-Channel

Number of Terminations :

3

Package / Case :

TO-220-3 Full Pack

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

773pF @ 100V

Configuration :

SINGLE WITH BUILT-IN DIODE