IPA50R280CE

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Super Junction

Series :

CoolMOS™

Rds On (Max) @ Id, Vgs :

280m Ω @ 4.2A, 13V

Power Dissipation-Max :

30.4W Tc

Gate Charge (Qg) (Max) @ Vgs :

32.6nC @ 10V

Pbfree Code :

yes

Package / Case :

TO-220-3 Full Pack

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

773pF @ 100V

Surface Mount :

No

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-220AB

Drain-source On Resistance-Max :

0.28Ohm

Drive Voltage (Max Rds On,Min Rds On) :

13V

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

500V

Vgs(th) (Max) @ Id :

3.5V @ 350μA

Reach Compliance Code :

Compliant

Pin Count :

3

DS Breakdown Voltage-Min :

500V

Published :

2008

Packaging :

Tube

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Transistor Element Material :

SILICON

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

42.9A

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

231 mJ

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

RoHS Compliant